deep-level impurity

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• Deep-level transient spectroscopy — (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are …   Wikipedia

• Crystallographic defect — Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials… …   Wikipedia

• Non-radiative recombination — is a process in phosphors and semiconductors, whereby charge carriers recombine without releasing photons. A phonon is released instead. Non radiative recombination in optoelectronics and phosphors is an unwanted process, lowering the light… …   Wikipedia

• Shallow donor — A shallow donor refers to a specific energy level present in semi conductors indicating a lower level of impurities.OverviewIntroducing impurities in a semiconductor which are used to set free additional electrons in its conduction band is called …   Wikipedia

• Capacitance voltage profiling — The CV , or more correctly C V , in C V profiling, stands for capacitance voltage, and refers to a technique used for characterization of semiconductor materials and devices. The technique uses a metal semiconductor junction (Schottky barrier) or …   Wikipedia

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• Crystallographic defects in diamond — Synthetic diamonds of various colors grown by the high pressure high temperature technique, the diamond size is 2 mm …   Wikipedia

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• Diamond — This article is about the mineral. For the gemstone, see Diamond (gemstone). For other uses, including the shape ◊, see Diamond (disambiguation) …   Wikipedia